Electrical properties of an amorphous zirconium oxide thin film and structure formation during crystallization
September 4-8, 2016
Metastable amorphous oxides with a strong oxygen deficiency often show surprising phenomena upon relaxation into thermodynamically stable phases. For example, Nagarajan et al. found a new type of chemically driven insulator-metal transition in highly non-stoichiometric gallium oxide films (GaOx). Here, an internal solid-state disproportionation reaction leads to the growth Ga2O3 nuclei in the initially insulating GaOx matrix which thereby attains metal-like conductivity. Moreover, it has been recently shown that such films can act as memristive switches. . Highly non-stoichiometric titania (TiO1.6) films show a similar disproportionation reaction upon heating but as the phase diagram for this material is more complex, various phases can be found during the relaxation .
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Ralph A. Henning, Thomas Leichtweiß, Ulrich Schürmann, Lorenz Kienle, and Jürgen Janek, "Electrical properties of an amorphous zirconium oxide thin film and structure formation during crystallization" in "Nonstoichiometric Compounds VI", ECI Symposium Series, (2016). http://dc.engconfintl.org/nonstoichiometric_vi/11
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