Embedded oxide semiconductor memories: A key enabler for low- power ULSI
May 21-25, 2017
Oxide semiconductor field-effect transistors (OSFETs) have been actively developed for display applications. The off-state current in an OSFET is more than ten orders of magnitude lower than that in a Si-FET . Displays using OSFET backplanes achieve low power consumption through idling-stop (IDS) driving , which dramatically decreases the refresh rate when the flame image is static. The extremely low off-state current of the OSFET is applicable not only to displays but to various other applications. Recently, OSFET technology has been applied to ULSI memory [3-6]. When used as a pass transistor connected to a storage node (SN), an OSFET allows the long-time retention of electric charge in the SN. Unlike conventional DRAM, the memory with OSFET eliminates the need for frequent refresh operations and reduces the refresh power. Furthermore, the memory can perform power gating (PG) in the idle state, solving the problem of leakage power observed in conventional SRAM. Thus, OSFETs enable low-power ULSI.
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Takahiko Ishizu, "Embedded oxide semiconductor memories: A key enabler for low- power ULSI" in "International Conference on Semiconductor Technology for Ultra-Large Scale Integrated Circuits and Thin Film Transistors VI (ULSIC vs TFT 6)", Yue Kuo (Texas A&M University, USA) Olivier Bonnaud (University of Rennes I, France) Eds, ECI Symposium Series, (2017). http://dc.engconfintl.org/ulsic_tft_6/1
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