September 4-8, 2016
Over the last decade, identification of new materials with potential applications to a wide variety of technologies has rapidly increased. In particular for solar technology, many new potential absorber materials based on earth-abundant and non-toxic elements have been predicted. These materials, often made in thin film form and known to absorb light 10–1000 times more efficiently than crystalline silicon, could lower photovoltaic (PV) module cost and enable broader solar deployment. One such material is zinc tin nitride (ZnSnN2), a II-IV-nitride analog of the III-nitride materials, which has been identified as a possible solar absorber due to its direct bandgap, large absorption coefficient, and disorder-driven bandgap tunability.
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Angela N. Fioretti, Andriy Zakutayev, Eric S. Toberer, and Adele Tamboli, "Leveraging off-stoichiometry to defeat n-type degeneracy in zinc tin nitride" in "Nonstoichiometric Compounds VI", ECI Symposium Series, (2016). https://dc.engconfintl.org/nonstoichiometric_vi/29