Set voltage distribution stabilized by constructing an oxygen reservoir in resistive random access memory
May 19-23, 2019
In this letter, the instability mechanism of RRAM was investigated, and a technique was developed to stabilize the distribution of high resistance state (HRS) and better concentrate the SET voltage. In previous research, we found that an interface-type switching characteristic was observed on the I-V curve beneath the filament-type switching behavior, owing to the oxygen accumulation effect. In this letter, this interface-type switching characteristic is used to fit the natural distribution of HRS for an analysis of the instability mechanism. According to the results, the reason for the HRS distribution is the accumulation of extra oxygen ions which are left over from a lower degree of oxygen and oxygen vacancy recombination during the reset process. We propose a solution which creates an extra oxygen reservoir by changing the surface topography of the electrode to store the surplus oxygen ions from the reset process, eliminating the accumulation effect, and indeed improving stability.
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Chih-Yang Lin, Chih- Hung Pan, Po-Hsun Chen, and Ting- Chang Chang, "Set voltage distribution stabilized by constructing an oxygen reservoir in resistive random access memory" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/13