Chemiresistive and resistive switching semiconductor based sensor for biomolecule detection
May 19-23, 2019
Recently, chemiresistive semiconductor, which varies its resistance or conductance status based on chemical phenomena at its surface, has been developed as a sensor device for biomolecule detection. Particularly, graphene has been one of the best example for the chemiresistive semiconductors, even for resistive switching semiconductors. In addition, the graphene is two-dimensional (2D) carbon structure having a large surface area, where significant biosensing applications have been continuously reported. In this study, we demonstrated reduced graphene oxide (rGO) biosensor structure for a stress hormone, i.e. cortisol, sensing. The device structure was stepwise self-assembly monolayers (SAMs) stacked by reduced graphene oxide between source and drain. Then, cortisol monoclonal antibody (c-Mab) was chemically tethered on reduced graphene oxide layer for the cortisol detection by its specific antigen-antibody binding. The current versus voltage (I-V) curve exhibited resistance changes and resistive switching I-V behaviors as a sensing mechanism, which demonstrated a unique possibility of rGO semiconductor based sensor. Also, chemiresistance change in the forms of resistance ratio was calibrated in terms of sensing cortisol concentration as shown in Figure 1.
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Hyun Ho Lee, Cheoin Gu, and Yongin Si, "Chemiresistive and resistive switching semiconductor based sensor for biomolecule detection" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/14