May 19-23, 2019
Solid state incandescent light emitting devices (SSI-LEDs) were first demonstrated in 2013 by Kuo’s group, which have the metal-oxide-semiconductor structure and emit white light directly1. The conductive filaments (CFs) through CAFM figures out that Si wafer has a significant impact on the device performance2, 3, multiplayer dielectric layers structure have also been study to enhance the light emission4. We demonstrate two approaches to improve the performance of SSI-LEDs by using patterned wafer in this work.
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Shengli Wu, Yiwei Liu, Xiaoning Zhang, Can Yang, Lingguang Liu, Yaogong Wang, and Gang Niu, "Performance enhancement of SSI-LEDs and geometrically confinement of lighting dots by using patterned wafer approaches" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/16