ECI Digital Archives

Title

Performance enhancement of SSI-LEDs and geometrically confinement of lighting dots by using patterned wafer approaches

Authors

Shengli Wu, Key Laboratory for Physical Electronics and Devices of the MOE, Xi’an Jiaotong University, ChinaFollow
Yiwei Liu, Xi’an Jiaotong University, China
Xiaoning Zhang, Xi’an Jiaotong University, China
Can Yang, Xi’an Jiaotong University, China
Lingguang Liu, Xi’an Jiaotong University, China
Yaogong Wang, Xi’an Jiaotong University, China
Gang Niu, Xi’an Jiaotong University, China

Conference Dates

May 19-23, 2019

Abstract

Solid state incandescent light emitting devices (SSI-LEDs) were first demonstrated in 2013 by Kuo’s group, which have the metal-oxide-semiconductor structure and emit white light directly¹. The conductive filaments (CFs) through CAFM figures out that Si wafer has a significant impact on the device performance^{2, 3}, multiplayer dielectric layers structure have also been study to enhance the light emission⁴. We demonstrate two approaches to improve the performance of SSI-LEDs by using patterned wafer in this work.

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Recommended Citation

Shengli Wu, Yiwei Liu, Xiaoning Zhang, Can Yang, Lingguang Liu, Yaogong Wang, and Gang Niu, "Performance enhancement of SSI-LEDs and geometrically confinement of lighting dots by using patterned wafer approaches" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/16