Homo-junction bottom-gate amorphous In-Ga-Zn-O TFTs with metal induced source /drain regions
May 19-23, 2019
A fabrication process for homo-junction bottom-gate (HJBG) amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) is proposed, in which the a-IGZO section as source/drain (S/D) region is induced to a low resistance state by coating a thin metal Al film and then performing a thermal annealing in oxygen, and that as channel region is protected from back etching by depositing and patterning a protective layer. Experimental results show that with a 5 nm Al film and a 200 ºC annealing, the sheet resistance of the S/D a-IGZO is 803 Ω/□ and keeps stable during subsequent thermal treatment. In addition, the annealing generated thin Al2O3 film contributes to improve the thermal stability and ambient atmosphere immunity of the fabricated HJBG TFTs.
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Shengdong Zhang, Yang Shao, and Xiaoliang Zhou, "Homo-junction bottom-gate amorphous In-Ga-Zn-O TFTs with metal induced source /drain regions" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/25