Homo-junction bottom-gate amorphous In-Ga-Zn-O TFTs with metal induced source /drain regions

Conference Dates

May 19-23, 2019


A fabrication process for homo-junction bottom-gate (HJBG) amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) is proposed, in which the a-IGZO section as source/drain (S/D) region is induced to a low resistance state by coating a thin metal Al film and then performing a thermal annealing in oxygen, and that as channel region is protected from back etching by depositing and patterning a protective layer. Experimental results show that with a 5 nm Al film and a 200 ºC annealing, the sheet resistance of the S/D a-IGZO is 803 Ω/□ and keeps stable during subsequent thermal treatment. In addition, the annealing generated thin Al2O3 film contributes to improve the thermal stability and ambient atmosphere immunity of the fabricated HJBG TFTs.

Please click Additional Files below to see the full abstract.

This document is currently not available here.