Reliability degradation phenomena in metal oxide thin film transistors
May 19-23, 2019
Oxide Thin Film Transistors have been extensively studied as driving elements for realizing next-generation displays. For this purpose, not only improvement of performance but also improvement of reliability are indispensable. Compared to amorphous Si and low temperature polycrystalline Si which have been put into practical use, unique deterioration phenomenon has been reported by various researchers. In this paper, we introduce the reliability of this oxide thin film transistor, mainly on degradation mechanism and improvement measures. First, we introduce deterioration phenomena against stress such as constant voltage application, AC voltage application, light irradiation, Joule heat and its mechanism. Next, we will also introduce the influence of hydrogen in the oxide material on the reliability of the device, measures for improving the passivation material and measures for improving the reliability of the device by improving the manufacturing process.
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Yukiharu Uraoka, Juan Paolo Bermundo, Mami Fujii, Mutsunori Uenuma, and Yasuaki Ishikawa, "Reliability degradation phenomena in metal oxide thin film transistors" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/46