Strain engineering for GeSn/SiGeSn multiple quantum well laser structures
May 19-23, 2019
Optically pumped GeSn laser have been realized, thus alloying of group IV elements germanium (Ge) and tin (Sn) has a large potential to be a solution for Si-photonics, since a direct bandgap for Sn incorporations above ~9 at.% is obtained . The value of the bandgap can further be controlled by adding Si into the mix, which can be exploited for the formation of heterostructures for carrier confinement . However, a sufficiently large difference in energy ΔE between the indirect L-valley and the direct Г-valley is required to achieve room temperature lasing. Recently lasing was reported at 180K in GeSn alloys with Sn concentrations as high as 22,3% . Alternatively ΔE can be increased by adding tensile strain to the GeSn layers. Here we will discuss that an appropriate combination of Sn concentration and strain will be advantageous to tailor gain and temperature stability of the structures.
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D. Grützmacher, D. Buca, Nils von den Driesch, Daniela Stange, Z. Ikonic, J.M. Hartmann, and Dennis Rainko, "Strain engineering for GeSn/SiGeSn multiple quantum well laser structures" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/47