The reliability of amorphous-InGaZnO4 thin film transistor influence by self-heating stress at high temperature under compressive strain
May 19-23, 2019
Flexible thin-film transistors (TFTs) play an important role in flexible technology applications, including wearable devices and high-resolution foldable displays and as curved displays. A reliability test was performed in this work, including mechanism and electrical stress at high temperature. An abnormal hump can be found in flexible a-InGaZnO4 TFTs after a self-heating stress at 90°C under compressive bending. COMSOL simulation confirmed that the etching stop layer absorbs more mechanism stress than the gate insulator. Accordingly, during the reliability stress, holes induced by the impact ionization tend to inject into the defect in the etching stop layer near the source side rather than the gate insulator, which is induced by compressive bending. Single side C-V measurement and forward/reverse-operation mode are utilized to analyze the hole trapping distribution.
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Yu-Ching Tsao, Yu-Ching Tsao, Yu-Lin Tsai, and Hong-Yi Tu, "The reliability of amorphous-InGaZnO4 thin film transistor influence by self-heating stress at high temperature under compressive strain" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/8