Influence of electrode thermal conductivity on resistive switching behavior during reset process
May 19-23, 2019
Resistive random access memory (RRAM) is the most promising candidate for non-volatile memory (NVM) due to its extremely low operation voltage, extremely fast write/erase speed, and excellent scaling capability. However, an obstacle hindering mass production of RRAM is the non-uniform physical mechanism in its resistance switching process. This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions cause a more complete reaction during the reset process, and cause the effective switching gap (dsw) to become thicker. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.
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Cheng-Hsien Wu, You-Lin Xu, Shih-Kai Lin, Tsung-Ming Tsai, and Ting-Chang Chang, "Influence of electrode thermal conductivity on resistive switching behavior during reset process" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/9