Charge Trapping Kinetics in Back-end Compatible Zinc-based Oxide Semiconductor Thin-Film Transistors with Aluminum Oxide Gate Dielectrics

Authors

• Chadwin D. Young, University of Texas at Dallas, USA
• Sourav Dutta, University of Texas at Dallas, USA
• Md Abdullah Al Mamun, University of Texas at Dallas, USA
• Rodolfo A. Rodriguez-Davila, University of Texas at Dallas, USA
• Shumiya Alam, University of Texas at Dallas, USA
• Jongchan Kim, University of Texas at Dallas, USA
• Tanvir Haider Pantha, University of Texas at Dallas, USA
• Adam A. Gruszecki, University of Texas at Dallas, USA
• Manuel Quevedo-Lopez, University of Texas at Dallas, USA
• Mohammad Abousaba, University of Texas at Dallas, USA
• Kyeongjae Cho, University of Texas at Dallas, USA

Conference Dates

March 30 - April 3, 2025

Abstract

Please click Additional Files below to see the full abstract

Recommended Citation

Chadwin D. Young, Sourav Dutta, Md Abdullah Al Mamun, Rodolfo A. Rodriguez-Davila, Shumiya Alam, Jongchan Kim, Tanvir Haider Pantha, Adam A. Gruszecki, Manuel Quevedo-Lopez, Mohammad Abousaba, and Kyeongjae Cho, "Charge Trapping Kinetics in Back-end Compatible Zinc-based Oxide Semiconductor Thin-Film Transistors with Aluminum Oxide Gate Dielectrics" in "2025 International Conference on Semiconductor Technology for Ultra Large-Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 9)", Yue Kuo, Texas A&M University & National Yang Ming Chiao Tung University Eds, ECI Symposium Series, (2025). https://dc.engconfintl.org/international_conference_on_semiconductor_technology/12