ECI Digital Archives

Title

A structural perception about intrinsic point defects in nonstoichiometric compound semiconductors

Authors

Susan Schorr, Helmholtz-Zentrum Berlin fuer Materialien und Energie, Department Structure and Dynamics of Energy Materials & Freie Universität Berlin, Institute of Geological SciencesFollow

Conference Dates

September 4-8, 2016

Abstract

Photovoltaics (PV), the direct conversion of light into electricity, is dominated by crystalline silicon (c-Si) technology nowadays. Thin film PV constitute an emerging alternative because of short energy payback time and minimum use of higt purity materials, addressing the urgent need for cost-competitive renewable energy technologies [1]. Compound semiconductors, like chalcopyrite type Cu(In,Ga)(Se,S)₂ (CIGSe) are the most advanced and most efficient absorber materials. CIGSe-based solar cells are very well positioned in the field of PV technologies with present record efficiencies for small cells of 22.3% (production size modules 16.5% ) [1].

One reason for their success is related to the high flexibility of the chalcopyrite crystal structure, accepting strong deviations from stoichiometry forming native point defects, such as vacancies, interstitials and antisites [2]. But CIGSe relies on the scarce elements In and Ga, which may severely limit the mass deployment of this PV technology.

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Recommended Citation

Susan Schorr, "A structural perception about intrinsic point defects in nonstoichiometric compound semiconductors" in "Nonstoichiometric Compounds VI", ECI Symposium Series, (2016). https://dc.engconfintl.org/nonstoichiometric_vi/32