Semiconductor Technology for Ultra-Large Scale Integrated Circuits and Thin Film Transistors VI (ULSIC vs TFT 6)
Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices
May 21-25, 2017
"plasma-induced physical damage (PPD)"—has been intensively studied, because the mechanism is naturally governed by basic plasma parameters2) and the stochastic mechanisms. Lateral straggling and sputtering of incident ions were found to be responsible for defect creation in the fin (sidewall) during finFET etching3). The created defects degrade device performance4) and enhance the parameter variability5) in ULSICs when the plasma fluctuates. Figure 1 illustrates the PPD mechanisms with a classical molecular dynamics (MD) simulation result. In this MD simulation6) (Fig. 1(b)), one thousand Br atoms—regarded as ions—were impinged only on the bottom surface at normal incidence. As seen, in addition to the damaged layer formation under the bottom surface, one can see the species permeating the fin bulk due to straggling and sputtering (Figs. 1(a) and 1(b)). Figure 1(c) shows the number of atoms counted in the fin from the MD snapshots. These species become the latent damage because they are hardly removed by the conventional wet-etch process.
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Koji Eriguchi, "Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices" in "Semiconductor Technology for Ultra-Large Scale Integrated Circuits and Thin Film Transistors VI (ULSIC vs TFT 6)", Yue Kuo (Texas A&M University, USA) Olivier Bonnaud (University of Rennes I, France) Eds, ECI Symposium Series, (2017). https://dc.engconfintl.org/ulsic_tft_6/13