May 21-25, 2017 Schloss Hernstein Hernstein, Austria
| Editors: | Yue Kuo (Texas A&M University, USA) |
|---|---|
| Olivier Bonnaud (University of Rennes I, France) |
The articles for these proceedings are not peer-reviewed.
Conference Program, Yue Kuo and Olivier Bonnaud (Article)
Gravimetric and biological sensors based on SAW and FBAR technologies, William Milne, Girish Rughoobur, I. Miele, A .J. Flewitt, Mario de Miguel Ramos, T. Mirea, M. Clement, J. Olivares, B. Diaz-Duran, J. Sangrador, and E. Iborra (Abstract)
TFT & ULSIC: Interfacing large-area thin-film sensor arrays with CMOS circuits, Sigurd Wagner, Yasmin Afsar, Tiffany Moy, Josue Sanz-Robinson, Warren Rieutort-Louis, Yingzhe Hu, Liechao Huang, James C. Sturm, and Naveen Verma (Abstract)
Large scale graphene integration for silicon technologies, Andreas Mai, Marco Lisker, Mindaugas Lukosius, and Grzegorz Lupina (Abstract)
SiGeSn/GeSn hetero- and multiple quantum well structures for optoelectronics on Si, Detlev Grützmacher, Nils von den Driesch, Daniela Stange, and Dan Buca (Abstract)
Neuromorphic application of oxide semiconductors, Mutsumi Kimura, Yasuhiko Nakashima, Tomoya Kameda, and Tokiyoshi Matsuda (Abstract and Presentation)
Brain-like synapse thin-film transistors using oxide semiconductor channels and solid electrolytic gate insulators, Sung-Min Yoon, Yeo-Myeong Kim, and Eom-Ji Kim (Abstract)
Visible and near-infrared photo-detector combining polysilicon TFT and PbS quantum dots, Tayeb Mohammed-Brahim, Emmanuel Jacques, Xiang Liu, and Lei Wei (Abstract)
Oxide TFTs for digital holography, Chi-Sun Hwang (Abstract)
Low-power display system enabled by combining oxide semiconductor and neural network technologies, Hitoshi Kunitake, Shintaro Harada, Fumika Akasawa, Yuki Okamoto, Takashi Nakagawa, Takeshi Aoki, Seiichi Yoneda, Hiroki Inoue, Munehiro Kozuma, Takayuki Ikeda, Shunpei Yamazaki, and Yoshiyuki Kurokawa (Abstract)
Atomic layer deposition: Low temperature process well adapted to ULSI and TFT technologies, Ahmad Chaker, Pierre Szkutnik, Patrice Gonon, Christophe Vallée, and Ahmad Bsiesy (Abstract)
Gap engineering and reliability study for 2D electronics, Kosuke Nagashio (Abstract)
Integration of 2D materials for advanced devices: Challenges and opportunities, Robert M. Wallace (Abstract)
Photoemission study of gate dielectrics on gallium nitride, Seiichi Miyazaki, Nguyen Xuan Truyen, and Akio Ohta (Abstract)
Multifunctional amorphous metal oxide thin films – Structure transformation for various functions, Yue Kuo (Abstract)
Oxide thin film transistors for flexible devices, Yukiharu Uraoka, Juan Paolo Bermundo, Mami Fujii, Mutsunori Uenuma, and Yasuaki Ishikawa (Abstract)
Low-temperature processed InGaZnO MES-FET for flexible device applications, Mamoru Furuta, Kenichiro Hamada, Yusaku Magari, and Shinsuke Hashimoto (Abstract)
Oxide semiconductor based charge trap device for vertically integrated NAND flash memory, Cheol Seong Hwang (Abstract)
Oxide thin films for sustainable, multifunctional and flexible electronics, Pedro Barquinha and Pydi Bahubalindruni (Abstract)
TFT and ULSI technologies: The parallel evolution of the research and the higher education in France, Olivier Bonnaud (Abstract and Presentation)
Devices in advanced technology nodes: Application-specific characterization, Gennadi Bersuker, Donald Pierce, and Maribeth Mason (Abstract)
Atomically controlled processing for dopant segregation in CVD silicon and germanium epitaxial growth, Junichi Murota, Yuji Yamamoto, and Vinh Le Thanh (Abstract)
Carrier density dependent energy band-gap and phonon frequency in Ge, Akira Toriumi (Abstract)
Electrically detected magnetic resonance in SiC MOSFETs utilizing multiple techniques, Patrick M. Lenahan and Mark A. Anders (Abstract)
Recent key developments in nanoscale reliability and failure analysis techniques for advanced nanoelectronics devices, K.L. Pey, S. Mei, A. Ranjan, K. Shubhakar, N. Raghavan, S.J. O’Shea, and M. Bosman (Abstract)
Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices, Koji Eriguchi (Abstract)
Advances in large PECVD processing technology up to Gen 11 for TFT LCD and OLED, Yi Cui, Beom Soo Park, Gaku Furuta, Jinhyun Cho, Soo Young Choi, Robin Tiner, Allen Lau, and Suhail Anwar (Abstract)
Printed poly-Si TFTs on paper via liquid-Si, Ryoichi Ishihara, Miki Trifunovic, Paolo Sberna, and Tatsuya Shimoda (Abstract)
Role of carrier injection in degradation of amorphous oxide films, Alexander Shluger, David Gao, Jack Strand, Oliver Dicks, and Moloud Kaviani (Abstract)
Equilibrium mobility in IGZO TFT: Existence of the intermediate boolchand phase?, Dieter G. Ast (Abstract and Presentation)
Single defect characterization at Si/SiO2 interface, Toshiaki Tsuchiya (Abstract)
Trapping mechanism of charge trap capacitor with Al2O3/High- k/Al2O3 multilayer, Toshihide Nabatame (Abstract)
Two-terminal vertical thyristor-based capacitorless memory cells using latch-up features, Min-Won Kim, Tae-Hun Shim, Seung-Hyun Song, Sang-Dong Yoo, and Jea-Gun Park (Abstract)
Advanced measurement techniques for the characterization of ReRAM devices, A. Crespo-Yepes, R. Rodriguez, M. Porti, J. Martin-Martinez, S. Claramunt, and X. Aymerich (Abstract)
Thin film transistor modeling: Frequency dispersion, Michael Shur (Abstract and Presentation)
Instability mechanisms in amorphous oxide semiconductors leading to a threshold voltage shift in thin film transistors, Andrew J. Flewitt and Kham M. Niang (Abstract)
Improvement in carrier mobility of metal oxide thin-film transistor by a microstructure modification, Jae Kyeong Jeong, Sang Tae Kim, and Yeonwoo Shin (Abstract)
Embedded oxide semiconductor memories: A key enabler for low- power ULSI, Takahiko Ishizu (Abstract)