Back-end of line compatible transistors for hybrid CMOS applications
May 19-23, 2019
The low-temperature back-end of line (BEOL) compatible transparent amorphous oxide semiconductor (TAOS) TFTs and poly-Si TFTs are the suitable platforms for three-dimensional (3D) integration hybrid CMOS technologies. The n-channel amorphous indium tungsten oxide (a-IWO) ultra-thin-film transistors (UTFTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO UTFTs with low operation voltages exhibit good electrical characteristics: near ideal subthreshold swing (S.S.) ~ 63mV/dec., high field-effect mobility (FE) ~ 25.3 cm2/V-s. In addition, we also have fabricated the novel less metal contamination Ni-induced lateral crystallization (LC-NILC) p-channel poly-Si TFTs. The matched electrical characteristics of n-channel and p-channel devices with low operation voltage and low IOFF are exhibiting the promising candidate for future hybrid CMOS applications.
Po-Tsun Liu, Po-Yi Kuo, Chien-Min Chang, and Hsiu-Hsuan Wei, "Back-end of line compatible transistors for hybrid CMOS applications" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/24