May 19-23, 2019
Palace Side Hotel
Kyoto, Japan
| Editors: | Yue Kuo, Texas A&M University, USA |
|---|---|
| Junichi Murota, Tohoku University, Japan | |
| Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan | |
| Yasuhiro Fukunaka, Kyoto University, Japan |
The articles for these proceedings are not peer-reviewed.
Conference Program, Yue Kuo, Junichi Murota, Yasuhiro Fukunaka, and Yukiharu Uraoka (Article)
Transparent oxide semiconductors: Materials design, electronic structure, and device applications, Hideo Hosono (Abstract)
ULSI and TFT technologies in industry, research and higher education in France: An evolution towards innovation resulting from close and sustainable interaction, Olivier Bonnaud (Abstract and Presentation)
Terahertz testing of very large scale integrated circuits, M. Shur and J. Suarez (Abstract)
Photoemission characterization of interface dipoles and electronic defect states for gate dielectrics, Seiichi Miyazaki and Akio Ohta (Abstract)
What will come after V-NAND – Vertical resistive switching memory?, Cheol Seong Hwang (Abstract)
Operation analysis of resistive switching of CBRAM using in-situ TEM, Yasuo Takahashi, Atsushi Tsurumaki-Fukuchi, and Masashi Arita (Abstract)
Strain engineering for GeSn/SiGeSn multiple quantum well laser structures, D. Grützmacher, D. Buca, Nils von den Driesch, Daniela Stange, Z. Ikonic, J.M. Hartmann, and Dennis Rainko (Abstract)
Reliability degradation phenomena in metal oxide thin film transistors, Yukiharu Uraoka, Juan Paolo Bermundo, Mami Fujii, Mutsunori Uenuma, and Yasuaki Ishikawa (Abstract)
Carrier transport and bias stress stability of IGZO TFT with heterojunction channel, Mamoru Furuta, Syuhei Hamada, Ryunosuke Higashi, and Daichi Koretomo (Abstract)
Relatively low-temperature processing and its impact on device performance and reliability, Chadwin s D. Young, Rodolfo A. Rodriguez Davila, Peng Zhao, Christopher Smyth, Manuel Quevedo-Lopez, and Robert M. Wallace (Abstract)
Reliability of flexible low temperature poly-silicon thin film transistor, Ting-Chang Chang, Chih-Yang Lin, Yu-Ching Tsao, Shin-Ping Huang, Bo-Wei Chen, Yi-Ting Tseng, Mao-Chou Tai, Cheng-Hsien Wu, Po-Wen Chang, and Po-Hsun Chen (Abstract)
Challenge of crystalline IGZO ceramics to silicon LSI - Its application to AI and displays, Shunpei Yamazaki (Abstract)
Introducing novel functional materials and liquids for breaking the limit of memory devices, Kentaro Kinoshita (Abstract)
Flexible organic thin film transistors for high-performance biosensors, Feng Yan (Abstract)
Mechanical ball shear, electromigration, and thermal cycling reliability testing on novel solder interconnects of highly integrated chips for advanced applications, Jenq-Gong Duh, Collin Fleshman, Rui-Wen Song, Hao Chen, and Tzu-Ting Chou (Abstract)
Non-volatile n+-TiO2 channel FETs with ferroelectric HfO2, Akira Toriumi (Abstract)
Langmuir-type mechanism for in-situ doping in CVD Silicon and Germanium Epitaxial Growth, Junichi Murota (Abstract)
Germanium-tin semiconductors: A versatile silicon-compatible platform, Oussama Moutanabbir, Anis Attiaoui, Étienne Bouthillier, Patrick Del Vecchio, Aashish Kumar, Jérome Nicolas, Samik Mukherjee, and Simon Assali (Abstract)
High performance gas sensor platform based on integrated sensing mechanisms, Jong-Ho Lee, Wonjun Shin, Gyuweon Jung, Seongbin Hong, Meile Wu, Yoonki Hong, and Yujeong Jeong (Abstract)
Embedded DRAM using c-axis-aligned crystalline In-Ga-Zn oxide FET with 1.8V-power-supply voltage, Eri Yamamoto, Seiya Saito, Keita Sato, Kazuma Furutani, Yuto Yakubo, Tatsuya Onuki, Takanori Matsuzaki, Tomoaki Atsumi, Yoshinori Ando, Tsutomu Murakawa, Kiyoshi Kato, and Shunpei Yamazaki (Abstract)
A new design methodology of highly reliable TFT based integrated circuits in display applications, Kai Wang, Di Geng, Yue Su, Ling Li, and Ming Liu (Abstract)
Dual Gate LTPS TFT versus Oxide TFT, Jin Jang (Abstract)
Fabrication and AC performance of flexible Indium-Gallium-Zinc- Oxide thin-film transistors, Niko Münzenrieder, Giuseppe Cantarella, and Luisa Petti (Abstract)
Observation of the behavior of additives in copper electroplating using a microfluidic device, Masanori Hayase, Takanori Akita, Mineyoshi Tomie, Ryo Ikuta, and Haruki Egoshi (Abstract)
Thermal oxidation kinetics of germanium, Akira Toriumi (Abstract)
Development of high performance metal oxide thin-film transistor for OLED and flexible display, Jae Kyeong Jeong (Abstract)
Introduction on atomic layer deposition for high-k dielectric & high mobility oxide semiconductor thin film transistors, Jin-Seong Park, Tae-Hyun Hong, Jiazhen Sheng, and Wan-Ho Choi (Abstract)
Flash lamp annealed polycrystalline silicon as a potential candidate for large panel manufacturing, Karl D. Hirschman, Adam Rosenfeld, Viraj Garg, Glenn Packard, and Robert Manley (Abstract)
Homo-junction bottom-gate amorphous In-Ga-Zn-O TFTs with metal induced source /drain regions, Shengdong Zhang, Yang Shao, and Xiaoliang Zhou (Abstract)
Back-end of line compatible transistors for hybrid CMOS applications, Po-Tsun Liu, Po-Yi Kuo, Chien-Min Chang, and Hsiu-Hsuan Wei (Abstract)
Adhesion lithography for large-area patterning of asymmetric nanogap electrodes, Gwenhivir Wyatt-Moon and Andrew Flewitt (Abstract)
Directed self-assembly of block copolymers for sub-10nm fabrication, Shisheng Xiong (Abstract)
Neuromorphic system using thin-film devices, Mutsumi Kimura (Abstract)
Stateful in-memory computing in emerging crossbar memories, Kyung Min Kim (Abstract)
Memristive crossbar arrays for brain-inspired computing, Qiangfei Xia (Abstract)
Emerging applications of TFTs enabled by novel device architectures, Kai Wang (Abstract)
Nano-resistors based devices - effects of size and structure on performance, Yue Kuo (Abstract)
Performance enhancement of SSI-LEDs and geometrically confinement of lighting dots by using patterned wafer approaches, Shengli Wu, Yiwei Liu, Xiaoning Zhang, Can Yang, Lingguang Liu, Yaogong Wang, and Gang Niu (Abstract and Presentation)
Microsystems for thermal energy powering, Takahito Ono (Abstract)
Chemiresistive and resistive switching semiconductor based sensor for biomolecule detection, Hyun Ho Lee, Cheoin Gu, and Yongin Si (Abstract)
Set voltage distribution stabilized by constructing an oxygen reservoir in resistive random access memory, Chih-Yang Lin, Chih- Hung Pan, Po-Hsun Chen, and Ting- Chang Chang (Abstract)
Investigation of degradation caused by charge trapping at etching-stop layer under AC gate-bias stress for InGaZnO thin film transistors, Mao-Chou Tai, Yu-Ching Tsao, Po-Wen Chang, and Mao-Chou Tai (Abstract)
Effect of different a-InGaZnO TFTs channel thickness upon self-heating stress, Po-Wen Chang, Ting-Chang Chang, Yu-Ching Tsao, and Mao-Chou Tai (Abstract)
Mechanism of thermal field and electric field in resistive random access memory using the high/low-k side wall structure, Yi-Ting Tseng, Ting-Chang Chang, Chih-Cheng Shih, and Po-Hsun Chen (Abstract)
Influence of electrode thermal conductivity on resistive switching behavior during reset process, Cheng-Hsien Wu, You-Lin Xu, Shih-Kai Lin, Tsung-Ming Tsai, and Ting-Chang Chang (Abstract)
The reliability of amorphous-InGaZnO4 thin film transistor influence by self-heating stress at high temperature under compressive strain, Yu-Ching Tsao, Yu-Ching Tsao, Yu-Lin Tsai, and Hong-Yi Tu (Abstract)
Analysis of IGZO crystalline structure and its stability by first-principles calculations, Tomonori Nakayama, Shunpei Yamazaki, Toshimitsu Obonai, Tomosato Kanagawa, Kenichi Okazaki, and Masahiro Takahashi (Abstract)
Bi-direction transmissible gate driver on array, Chia-Heng Tu, Chia-Heng Tu, Jin-Hao Huang, and Guang-Ting Zheng (Abstract)
A TCAD calibrated approach for on-state modeling of amorphous oxide semiconductor TFTs, Karl Hirschman, Glenn Packard, and Robert Manley (Abstract)
Effects of X-ray irradiation on the noise behavior of low-temperature polycrystalline silicon TFTs, Shan Yeh and Ya-Hsiang Tai (Abstract)
Reliability of plasma-etched copper lines on a glass substrate, Yue Kuo, MingQian Liu, and JiaQuan Su (Abstract)
Gravitational level effects o optical properties of electrodeposited ZnO nanowire arrays, Y. Fukunaka, T. Homma, H. Osaki, and Y. Kanemistu (Abstract)
A piecewise linear approximation for output characteristic for short-channel “extrinsic” mosfet with accounting of nonzero differential conductance in saturation regime and source parasitic resistance effect at high drain biases, Valentin Turin, Roman Shkarlat, Badriddin Rakhmatov, Gennady Zebrev, Chang-Hyun Kim, Benjamin Iñiguez, and Michael Shur (Abstract)