Introduction on atomic layer deposition for high-k dielectric & high mobility oxide semiconductor thin film transistors
May 19-23, 2019
Amorphous oxide semiconductors have been widely studied for the potential use in flat panel displays such as active matrix liquid crystal display (LCD) and Organic light emitting diodes (OLEDs). Since reporting amorphous InGaZnO semiconductor thin film transistor (TFT) in 2003 & 2004, many multi-component oxide semiconductors have been intensively investigated and developed by reactive sputtering method. Very recently, the sputtered InGaZnO TFTs are already adopted in mass-production to fabricate AMOLED TVs. However, there remain several problems such as high mobility & stability issues. Also, virtual and argument reality (VR, AR) applications are rapidly emerging in display markets but the main issues are high resolution and low-voltage driving technologies.
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Jin-Seong Park, Tae-Hyun Hong, Jiazhen Sheng, and Wan-Ho Choi, "Introduction on atomic layer deposition for high-k dielectric & high mobility oxide semiconductor thin film transistors" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/27