Introduction on atomic layer deposition for high-k dielectric & high mobility oxide semiconductor thin film transistors

Conference Dates

May 19-23, 2019


Amorphous oxide semiconductors have been widely studied for the potential use in flat panel displays such as active matrix liquid crystal display (LCD) and Organic light emitting diodes (OLEDs). Since reporting amorphous InGaZnO semiconductor thin film transistor (TFT) in 2003 & 2004, many multi-component oxide semiconductors have been intensively investigated and developed by reactive sputtering method. Very recently, the sputtered InGaZnO TFTs are already adopted in mass-production to fabricate AMOLED TVs. However, there remain several problems such as high mobility & stability issues. Also, virtual and argument reality (VR, AR) applications are rapidly emerging in display markets but the main issues are high resolution and low-voltage driving technologies.

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