Invited - Mesoporous titania based synaptic device characteristics

Conference Dates

May 15-18, 2023


In this study, thin films of mesoporous titania (meso-TiOx) were developed by the EISA method as an active layer of memristor devices. The devices were studied over the comparison of analog resistive switching behavior among three different patterned top electrodes (e.g. crossbar, cap structure, and lateral electrode) along with the various top and bottom electrodes such as Al, Pt, ITO and Au. The IV characteristics with SET (ON) and RESET (OFF) state implies that meso-TiOx shows memristive behavior for all device structures. This study also demonstrates dependence of top electrode materials in I-V characteristics.

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