May 15-18, 2023
Sapporo, Hokkaido, Japan
Chair: Y. Kuo, Texas A&M University, USA
The articles for these proceedings are not peer-reviewed.
Conference Program, Yue Kuo (Article)
Invited: Challenge to next-generation VLSI with VFET using oxide semiconductor and 3D structure, Shunpei Yamazaki (Abstract)
Invited; ULSI and TFT technologies joint forces to meet the future challenges of a pervasive digital society, Olivier Bonnaud (Abstract and Presentation)
Invited; Atomic-order surface reaction of reactant gas on group IV semiconductor (100) surface, Junichi Murota (Abstract)
Formation and luminescence studies of Ge/Si core-shell quantum dots, Seiichi Miyazaki, Katsunori Makihara, and Yuki Imai (Abstract)
Invited; Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications, Osamu Nakatsuka, Masashi Kurosawa, Shigehisa Shibayama, and Mitsuo Sakashita (Abstract)
Crystallinity of In-Ga-Zn-oxide (IGZO) in CAAC-IGZO vertical FET, Tomonori Nakayama, Yukinori Shima, Toshikazu Ono, Nao Sorida, Naoki Okuno, Hitoshi Kunitake, and Shunpei Yamazaki (Abstract)
Spinel, an overlooked crystalline phase of Igzo, Hendrik F.W. Dekkers, Akhilesh Kumar Mandal, Evangelos Agiannis, Adrian Vaisman Chasin, Romain Delhougne, Attilio Belmonte, and Gouri Sankar Kar (Abstract and Presentation)
Invited; Progress of p-channel oxide-TFT development and how we improve the performances, Kenji Nomura (Abstract)
Invited; P-channel metal oxide thin film transistors for flexible CMOS logic: Challenges and opportunities, Andrew Flewitt, Kham Niang, Daisy Gomersall, Jake Meeth, Niels van Fraassen, Sanggil Han, James Parish, and Andrew Johnson (Abstract)
Invited; What can we do with ferroelectric gate?, Eisuke Tokumitsu (Abstract)
Invited; Material challenges in HfO2-based ferroelectric memory devices, Min Hyuk Park (Abstract)
Invited; Ferroelectric phase transformation accelerated in nanolaminate HfO2-ZrO2 thin films, Shinji Migita (Abstract)
Invited; Ternary amorphous oxide semiconductor material toward 3D-integrated ferroelectric devices, Takanori Takahashi, Mutsunori Uenuma, Masaharu Kobayashi, and Yukiharu Uraoka (Abstract)
Invited; Microfabrication of BiTeSb thermoelectric devices for applications to IoT sensors, Takahito Ono, Nguyen Van Toan, and Trung Thi Kim Tuoi (Abstract)
Invited; HfZrO-based ferroelectric capacitors and FETs for ultralow-power signal processing, Shinichi Takagi, Kasidit Toprasertpong, Eishin Nako, Xuan Luo, Mitsuru Takenaka, and Ryosho Nakane (Abstract)
Invited; Contact effects towards mainstream thin-film transistor applications, Radu A. Sporea (Abstract)
Invited; Latch-up issue between high-voltage circuit domain and low-voltage circuit domain in TFT LCD driver IC fabricated with BCD process, Ming-Dou Ker and Zi-Hong Jiang (Abstract)
Invited; Poly-oxide Tft for flexible electronics, Jin Jang (Abstract)
Invited; ALD of robust amorphous oxide TFTS with turn on at the Boltzmann limit, Rebecca L. Peterson, Christopher R. Allemang, Tonglin L. Newsom, Tae H. Cho, and Neil P. Dasgupta (Abstract)
Invited; TFT circuits for driving sensors and actuators on flat panels, Florian De Roose, Nikolas Papadopoulos, Raf Appeltans, and Paul Heremans (Abstract)
Invited; CMOS inverters and circuits based on oxide thin-film transistors, I-Chun Cheng, Shu-Ming Hsu, Yun-Shiuan Li, Wei-Chen Li, Feng-Yu Tsai, and Jian-Zhang Chen (Abstract)
Device layout dependence of PBTI in back-gated IGZO TFTs, Pietro Rinaudo, Adrian Chasin, Jacopo Franco, Ben Kaczer, Ingrid de Wolf, and Gouri Kar (Abstract)
Invited; Vertical channel-all-around IGZO FET for low latency, high-density 2T0C 3D DRAM application, Di Geng, Chuanke Chen, Xinlv Duan, and Ling Li (Abstract)
Invited; Circuit architecture and pixel array driving methods for AMOLED and Mini/Micro-LED displays, Chih-Lung Lin (Abstract)
Invited; An atomistic understanding of the oxygen vacancies in Pt/TiO2/Ti resistive random access memory: Ab initio study, Jung-Hae Choi (Abstract)
Invited; An overview of the three-dimensionally stacked dynamic random access memory, Cheol Seong Hwang (Abstract)
Tri-layer self-aligned structure indium gallium zinc oxide thin film transistor with optical synaptic plasticity, Po-Tsun Liu, Tsung-Che Chiang, Zhen-Hao Li, Jing-Zhong Deng, and Yue Kuo (Abstract)
Invited; Ultrathin organic transistors toward next-generation skin electronics, Sunghoon Lee, Tomoyuki Yokota, and Takao Someya (Abstract)
GAP-type low-temperature polycrystalline silicon thin film transistors for light sensing photo-transistor application, Po-Tsun Liu, Jo-Lin Chen, Tsung-Che Chiang, Zhen-Hao Li, Yu-Ting Tsai, and Yue Kuo (Abstract)
Invited; New development on plasma-based copper etch at room temperature, Yue Kuo (Abstract)
Invited; Solid-phase crystallization of hydrogen-doped indium oxide for low temperature processed TFTs, Mamoru Furuta (Abstract)
Base pressure controlled fabrication of high-mobility In2O3 thin film transistors, Yusaku Magari, Prashant Ghediya, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, and Hiromichi Ohta (Abstract)
Solution processed ultrawide bandgap insulator to semiconductor conversion of amorphous gallium oxide via fermi level control, Juan Paolo Bermundo, Diki Purnawati, Paul Rossener Regonia, Kazushi Ikeda, and Yukiharu Uraoka (Abstract)
Invited; Developing low-temperature defect passivation technology with supercritical fluid technology, Po-Hsun Chen, Ting-Chang Chang, Pei-Yu Wu, Jian-Jie Chen, Chuan-Wei Kuo, Sheng-Yao Chou, Yu-Bo Wang, and Hung-Ming Kuo (Abstract)
Invited - Spiking neuron circuits in ULSIC vs TFT technologies, Laurie E. Calvet; Benjamin Iniguez; Kruno Romanjek,; and Zonglong Li (Abstract)
Invited - Metal-oxide thin-film transistor: An enabling technology for smart sensor construction and 3-D monolithic integration, Man Wong, Zhihe Xia, Tengteng Lei, and Yushen Hu (Abstract)
Invited - Temporal information processing for in-sensor computing based on amorphous IGZO phototransistor, Jen- Sue Chen, Ching-Hsiang Yang, and Li-Chung Shih (Abstract)
Invited - TFT-based active sensors and sensor interfaces, Kai Wang (Abstract)
Invited - Organic electrochemical transistors for sensing applications, Feng Yan (Abstract)
Invited - Droplets driving and sensing pixel circuits for thin film transistor-based digital microfluidics, Hanbin Ma, Dongping Wang, Chunyu Chang, Yingbo Wei, Arokia Nathan, and Jun Yu (Abstract)
Invited - Mesoporous titania based synaptic device characteristics, Hyun Ho Lee (Abstract)
Invited - Characteristics of oxide TFT using atomic-layer deposited InOx-based metal oxide channel, Toshihide Nabatame, Riku Kobayashi, and Kazuhito Tsukagoshi (Abstract)
Extract coefficients of thermal expansion of TaN thin film by tuning the N2 gas flow in the PVD process, YAO-ZIH LAI, WEILEUN FANG, and YU-CHEN HSIN (Abstract)
Highly sensitive broadband phototransistors based on gradient tin/lead mixed thin film perovskites, Hok-Leung Loi and Feng Yan (Abstract)
Ultra-sensitive and portable organic electrochemical transistors for noninvasive saliva glucose monitoring, Zeyu ZHAO and Feng YAN (Abstract)
Flexible Ion-selective biosensors for sweat analysis, Zhiyuan TIAN and Feng YAN (Abstract)
Vertical oxide semiconductor field-effect transistor with extremely low off-state current, Takeya Hirose, Tomonori Nakayama, Manabu Sato, Tomoaki Atsumi, Masahiro Takahashi, Satoru Saito, Hitoshi Kunitake, Hideaki Shishido, Takanori Matsuzaki, Shunpei Yamazaki, and Masataka Nakada (Abstract)
Analysis of carrier injection under high temperature AC operation in top gate IGZO TFTs, Kuan-Ju Zhou, Ting-Chang Chang, Po-Hsun Chen, Bo-Shen Huang, and Simon M. Sze (Abstract)
Clean dry etching of Cu and Ni alloy metal thin film by reactive proton assisted etching, MunPyo Hong, Sungyoun Lee, Minyoung Kim, Sangheon Lee, Donghoon Kim, Chiwoo Kim, Jin Nyoung Jang, Jong Hwa Lee, and Sang-Gab Kim (Abstract)
Room temperature gas sensing with a hybrid poly-Si/ZnO TFT cell, Horng-Chih Lin, Jen-Chi Liao, Ping-Che Liu, and Pei-Wen Li (Abstract)
Donor activation in boron and phosphorus implanted self-aligned bottom-gate Igzo Tfts, Eli Powell, Rahnuma Rifat, Karl D. Hirschman, Robert G. Manley, and Bin Zhu (Abstract)
Ambipolar oxide thin-film transistor-based artificial synapses, Chihsin Huang and Kenji Nomura (Abstract)
Hafnium oxide-based ferroelectric thin-film transistor with a-InGaZnO channel fabricated at temperatures <= 350°C, Che-Chuan Lee, Chun-Wei Chang, Min-Hung Lee, and I-Chun Cheng (Abstract)
P-type tin monoxide thin-film transistors on cellulose nanopaper substrates, You-Hong Zhang, Pu-Yuan Lin, Feng-Cheng Chang, and I-Chun Cheng (Abstract)
Electrical performance of amorphous IGZO thin-film transistor on cellulose nanopaper substrate, Zi-Fan Cao, Chih-Han Tseng, Feng-Cheng Chang, and I-Chun Cheng (Abstract)