Tri-layer self-aligned structure indium gallium zinc oxide thin film transistor with optical synaptic plasticity

Conference Dates

May 15-18, 2023


Since the 1950s, computer computing has been governed by the von Neumann architecture, which allows data to be transmitted across the processor and memory for computation. Nowadays, the demand for large amounts of information transmission has limited the processing speed by the memory bandwidth and generated higher power consumption. The Human brain can perform high-speed operation, store and calculate as one, so the human neuromorphic computation is the next-generation architecture to solve the “von Neumann bottleneck” [1- 2]. In this work, we have successfully developed tri-layer self-aligned structure indium gallium oxide (IGZO) thinfilm transistors (TFTs) with optical-synaptic plasticity. The channel conductance of IGZO TFTs would be modulated after the pulse voltage input from gate electrode.

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