Invited; CMOS inverters and circuits based on oxide thin-film transistors

Conference Dates

May 15-18, 2023


Thin-film transistors (TFTs) based on oxide semiconductors have the advantage of promising carrier mobilities and good switching characteristics, and they can be fabricated by low-temperature and scalable processes. Complementary metal-oxide-semiconductor (CMOS) technology employing oxide TFTs shows great potential in enabling flexible electronics with versatile functionalities and low-static power consumptions. Here flexible CMOS inverters comprising p-type SnO TFTs and n-type ZnO or IGZO TFTs integrated in three different configurations were implemented and compared, as shown in Fig. 1. First, the planar inverter comprising bottom-gated SnO and ZnO TFTs with a geometric aspect ratio, (W/L)p / (W/L)n, of 5 had a static voltage gain of ~ 10 V/V at a supplied voltage (VDD) of 10 V [1]. However, the gain decreased as the inverter was subjected to a mechanical tensile strain, which may be ascribed to the degradation of TFT mobilities.

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