Invited; Atomic-order surface reaction of reactant gas on group IV semiconductor (100) surface

Conference Dates

May 15-18, 2023


Atomic-order surface reactions of reactant gases on group IV semiconductor (100) surface in ultra-clean hotwall low-pressure CVD are described as a function of reactant gas partial pressure with the fitting parameters. Now, assuming that one reactant molecule occupies one free surface site according to Langmuir-type model, total adsorption site density n0 on the (100) substrate surface is given by the sum of free site density Qs and the site density QMs where reactant molecule M is adsorbed. Surface adsorption velocity on the surface is given by dQMs/dt = kMsPMQs - k-MsQMs = kMsPMn0 - (kMsPM + k-M)QMs, where kMs and k-Ms is adsorption and desorption rate constants of M, respectively, and PM is partial pressure of M.

Please click Download on the upper right corner to see the full abstract.

This document is currently not available here.