Invited: Challenge to next-generation VLSI with VFET using oxide semiconductor and 3D structure

Conference Dates

May 15-18, 2023


on OSLSI by John Wiley & Sons, Inc., in 2017 [1]. OS has attracted such attention that almost 10% of the accepted papers was related to the field at the IEEE International Electron Devices Meeting (IEDM), the world's largest international conference on semiconductor manufacturing, held in December 2022. In the tutorial taught by IBM on the first day of IEEE IEDM 2022, the necessity of vertical field-effect transistors (VFETs) and stacked FETs was anticipated for beyond-1-nm-node semiconductors that are next to the 2- to 3-nm-node semiconductors [2]. A gate-all-around (GAA) structure has been proposed as the new structure in the Si VLSI field. However, we propose a VFET structure that goes a step ahead of the GAA structure and are convinced that a VFET using OS and a 3D structure (stack structure) in which the VFETs are stacked vertically will be the next mainstream.

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