Title
A piecewise linear approximation for output characteristic for short-channel “extrinsic” mosfet with accounting of nonzero differential conductance in saturation regime and source parasitic resistance effect at high drain biases
Conference Dates
May 19-23, 2019
Abstract
Previously, we transformed the linear drain bias asymptote equation for the MOSFET drain current in the saturation regime from the “intrinsic” (without accounting for the contact and parasitic series resistances) case into “extrinsic” (with accounting for the contact and parasitic series resistances) case with accounting for the velocity saturation effect. As a result, we obtained the equation for the drain current that yielded the nonlinear dependence on the “extrinsic” drain bias for the short-channel “extrinsic” MOSFET in saturation regime in an implicit form. This equation can be solved numerically in the entire range of the “extrinsic” drain bias. Using this extrinsic equation, we derived the equation for the differential conductance of the “extrinsic” MOSFET at the “saturation point”. Such “saturation point” is determined by the saturation current and saturation voltage equations for the “extrinsic” MOSFET that are well known from literature. We proposed a linear approximation for the dependence of the short-channel “extrinsic” MOSFET drain current on the “extrinsic” drain bias in the saturation regime. This approach works well for not very high drain bias.
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Recommended Citation
Valentin Turin, Roman Shkarlat, Badriddin Rakhmatov, Gennady Zebrev, Chang-Hyun Kim, Benjamin Iñiguez, and Michael Shur, "A piecewise linear approximation for output characteristic for short-channel “extrinsic” mosfet with accounting of nonzero differential conductance in saturation regime and source parasitic resistance effect at high drain biases" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/1