Title
Dual Gate LTPS TFT versus Oxide TFT
Conference Dates
May 19-23, 2019
Abstract
There is of increasing interest for dual gate, dual sweep driving for TFTs to have higher drain current. We studied the dual gate structure of a-IGZO TFT by dual sweep, exhibiting much higher drain currents and better threshold voltage and smaller subthreshold swing. In this work we studied the dual gate LTPS TFTs and found very different results. The increase in drain current of LTPS TFT is found but the threshold voltage and SS are similar to those of a single gate TFT.
Recommended Citation
Jin Jang, "Dual Gate LTPS TFT versus Oxide TFT" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/32