ECI Digital Archives

Title

Carrier transport and bias stress stability of IGZO TFT with heterojunction channel

Authors

Mamoru Furuta, Kochi University of Technology, JapanFollow
Syuhei Hamada, Kochi University of Technology, Japan
Ryunosuke Higashi, Kochi University of Technology, Japan
Daichi Koretomo, Kochi University of Technology, Japan

Conference Dates

May 19-23, 2019

Abstract

An InGaZnOx (IGZO) thin-film transistor (TFT) has been received considerable attention for use in next-generation displays owing to their excellent electrical properties. Although a field effect mobility (m_FE) of the IGZO TFT (10~15 cm²V^–1s^–1) is over ten times larger than that of an amorphous silicon TFT, further enhancement of the m_FE is desired to expand their applications. Several approaches have been proposed to improve the m_FE of oxide TFT. Among them, it is known in the IGZO material system that an increase of In content is effective to enhance the m_FE of the IGZO TFT since a conduction band of the IGZO is mainly composed of an In 5s orbitals. However, high In composition leads to an increase carrier concentration (oxygen vacancy) in the film, result in a degradation of TFT properties such as negative shift of threshold voltage and hump in transfer characteristics.

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Recommended Citation

Mamoru Furuta, Syuhei Hamada, Ryunosuke Higashi, and Daichi Koretomo, "Carrier transport and bias stress stability of IGZO TFT with heterojunction channel" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/45