Carrier transport and bias stress stability of IGZO TFT with heterojunction channel
May 19-23, 2019
An InGaZnOx (IGZO) thin-film transistor (TFT) has been received considerable attention for use in next-generation displays owing to their excellent electrical properties. Although a field effect mobility (mFE) of the IGZO TFT (10~15 cm2V–1s–1) is over ten times larger than that of an amorphous silicon TFT, further enhancement of the mFE is desired to expand their applications. Several approaches have been proposed to improve the mFE of oxide TFT. Among them, it is known in the IGZO material system that an increase of In content is effective to enhance the mFE of the IGZO TFT since a conduction band of the IGZO is mainly composed of an In 5s orbitals. However, high In composition leads to an increase carrier concentration (oxygen vacancy) in the film, result in a degradation of TFT properties such as negative shift of threshold voltage and hump in transfer characteristics.
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Mamoru Furuta, Syuhei Hamada, Ryunosuke Higashi, and Daichi Koretomo, "Carrier transport and bias stress stability of IGZO TFT with heterojunction channel" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/45