Invited; Solid-phase crystallization of hydrogen-doped indium oxide for low temperature processed TFTs

Conference Dates

May 15-18, 2023


An amorphous In–Ga–Zn–O (IGZO) has attracted particular attention for thin-film transistor (TFT) applications owing to its high field effect mobility (μFE) of more than 10 cm2V−1s−1, steep subthreshold swing, extremely low leakage current, large-area uniformity, and good bias stress stability. Although the μFE of an IGZO TFT is over one order of magnitude higher than that of an amorphous Si TFT, further improvement of the μFE of oxide TFTs is required to expand their range of applications for both the displays and LSIs. An indium oxide (InOx) is known as a potential material for enhancing the μFE of oxide TFTs. However, undoped InOx exhibit a high background carrier density of over 1020 cm-3, making them unsuitable for a channel material of the TFTs.

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