Base pressure controlled fabrication of high-mobility In2O3 thin film transistors

Authors

Yusaku Magari, Research Institute for Electronic Science, Hokkaido University
Prashant Ghediya, Research Institute for Electronic Science, Hokkaido University
Hui Yang, Research Institute for Electronic Science, Hokkaido University
Yuqiao Zhang, Institute of Quantum and Sustainable Technology, Jiangsu University
Yasutaka Matsuo, Research Institute for Electronic Science, Hokkaido University
Hiromichi Ohta, Research Institute for Electronic Science, Hokkaido University

Conference Dates

May 15-18, 2023

Abstract

Transparent amorphous oxide semiconductors (TAOSs) have been extensively studied as active channel layers of thin-film transistors (TFTs) for next-generation flat-panel displays. Among TAOSs, amorphous In–Ga–Zn–O (a-IGZO) TFTs have now become the backplane standard for active-matrix liquid-crystal displays and activematrix organic light-emitting diode displays because of their reasonable field-effect mobility (μFE) of over 10 cm2 V−1 s−1, extremely low leakage current, low process temperature (<350 °C), and large-area scalability [1].

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Recommended Citation

Yusaku Magari, Prashant Ghediya, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, and Hiromichi Ohta, "Base pressure controlled fabrication of high-mobility In2O3 thin film transistors" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/24