Invited; Vertical channel-all-around IGZO FET for low latency, high-density 2T0C 3D DRAM application
Conference Dates
May 15-18, 2023
Abstract
DRAM devices are an essential component of most digital devices and they play a crucial role in the development of cloud computing, edge computing, Internet-of-Things and Artificial Intelligence. Currently, DRAM scaling is now facing challenges largely due to the mismatch of the reduced storage capacitance and increasing off-current. IGZO based field-effect transistors (IGZO FETs) are very well known for their very low IOFF (<10-22A/µm), representing a solution for reducing the DRAM cell leakage. The demonstration of BEOLcompatible long-retention 2T0C DRAM cell based on the IGZO-FETs shows a very promising approach to overcome the mismatch challenge of the traditional 1T1C DRAM cell
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Recommended Citation
Di Geng, Chuanke Chen, Xinlv Duan, and Ling Li, "Invited; Vertical channel-all-around IGZO FET for low latency, high-density 2T0C 3D DRAM application" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/33