Invited; Vertical channel-all-around IGZO FET for low latency, high-density 2T0C 3D DRAM application

Conference Dates

May 15-18, 2023


DRAM devices are an essential component of most digital devices and they play a crucial role in the development of cloud computing, edge computing, Internet-of-Things and Artificial Intelligence. Currently, DRAM scaling is now facing challenges largely due to the mismatch of the reduced storage capacitance and increasing off-current. IGZO based field-effect transistors (IGZO FETs) are very well known for their very low IOFF (<10-22A/µm), representing a solution for reducing the DRAM cell leakage. The demonstration of BEOLcompatible long-retention 2T0C DRAM cell based on the IGZO-FETs shows a very promising approach to overcome the mismatch challenge of the traditional 1T1C DRAM cell

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