Conference Dates

May 15-18, 2023


In the family of semiconducting oxides, InGaZnO4 (IGZO) is most attractive due to the absence of mobile holes and the preservation of a relative high electron mobility when the material is in the amorphous phase. Especially this last characteristic enables low deposition temperature (Td), beneficial for the application as semiconducting channels of thin film transistors (TFT) in optical displays and 3D memory elements. However, a disadvantage related to the amorphous phase is the distribution of bonding energies of oxygen anions, which is directly related to the distributed distances with respect to the neighboring metal cations [1], leading to free electron formation readily at low temperature.

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