Crystallinity of In-Ga-Zn-oxide (IGZO) in CAAC-IGZO vertical FET
Conference Dates
May 15-18, 2023
Abstract
Oxide semiconductor field-effect transistors (OSFETs) are actively developed [1]. In particular, there are many reports on a typical oxide semiconductor, In-Ga-Zn oxide (IGZO) [2]. An OSFET is fabricated with a planar structure in many cases; however, a vertical FET (VFET) with a current path perpendicular to a substrate can be fabricated with an area overhead comparable to one trench hole, and is gathering attention [3]. The VFET structure enables OSFETs to be highly integrated, and also allows the resolution of displays to be higher.
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Recommended Citation
Tomonori Nakayama, Yukinori Shima, Toshikazu Ono, Nao Sorida, Naoki Okuno, Hitoshi Kunitake, and Shunpei Yamazaki, "Crystallinity of In-Ga-Zn-oxide (IGZO) in CAAC-IGZO vertical FET" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/50