Donor activation in boron and phosphorus implanted self-aligned bottom-gate Igzo Tfts
Conference Dates
May 15-18, 2023
Abstract
Self-aligned channel regions in thin-film transistors (TFTs) have advantages in reduced parasitic capacitance and stage delay, and a reduction in overhead real estate. A common method used to fabricate self-aligned a‑Si:H TFTs is to utilize a through-glass exposure of photoresist which is blocked by the opaque metal bottom-gate electrode [1,2]. This process does not require an additional photomask or lithographic alignment, and thus supports low production cost. Sputtered IGZO has been introduced into flat panel display product manufacturing, exhibiting a channel mobility of approximately an order of magnitude higher than a-Si:H. The working source/drain electrodes in IGZO TFTs can be direct metal contact regions to the IGZO, without the need for additional processes such as doping to render the IGZO conductive. Proper metallurgy and annealing processes can provide ohmic behavior with minimal series resistance, however this usually requires several microns of gate-to-source/drain overlap to ensure such behavior.
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Recommended Citation
Eli Powell, Rahnuma Rifat, Karl D. Hirschman, Robert G. Manley, and Bin Zhu, "Donor activation in boron and phosphorus implanted self-aligned bottom-gate Igzo Tfts" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/5