Crystallinity of In-Ga-Zn-oxide (IGZO) in CAAC-IGZO vertical FET

Conference Dates

May 15-18, 2023


Oxide semiconductor field-effect transistors (OSFETs) are actively developed [1]. In particular, there are many reports on a typical oxide semiconductor, In-Ga-Zn oxide (IGZO) [2]. An OSFET is fabricated with a planar structure in many cases; however, a vertical FET (VFET) with a current path perpendicular to a substrate can be fabricated with an area overhead comparable to one trench hole, and is gathering attention [3]. The VFET structure enables OSFETs to be highly integrated, and also allows the resolution of displays to be higher.

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