Vertical oxide semiconductor field-effect transistor with extremely low off-state current
Conference Dates
May 15-18, 2023
Abstract
Oxide semiconductor field-effect transistors (OSFETs) are actively developed for display applications. An OSFET exhibits a lower off-state current than a silicon FET and enables low-frequency driving. We developed the measurement method and revealed the OSFET exhibits an extremely low off-state current [1]. In addition, we discovered a c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) which was unique crystal morphology [2]. A display with a backplane formed using CAAC-IGZO FETs achieves low power consumption owing to idling-stop driving that allows an extremely low refresh rate [3].
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Recommended Citation
Takeya Hirose, Tomonori Nakayama, Manabu Sato, Tomoaki Atsumi, Masahiro Takahashi, Satoru Saito, Hitoshi Kunitake, Hideaki Shishido, Takanori Matsuzaki, Shunpei Yamazaki, and Masataka Nakada, "Vertical oxide semiconductor field-effect transistor with extremely low off-state current" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/9