Vertical oxide semiconductor field-effect transistor with extremely low off-state current

Conference Dates

May 15-18, 2023


Oxide semiconductor field-effect transistors (OSFETs) are actively developed for display applications. An OSFET exhibits a lower off-state current than a silicon FET and enables low-frequency driving. We developed the measurement method and revealed the OSFET exhibits an extremely low off-state current [1]. In addition, we discovered a c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) which was unique crystal morphology [2]. A display with a backplane formed using CAAC-IGZO FETs achieves low power consumption owing to idling-stop driving that allows an extremely low refresh rate [3].

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