Investigating RF Sputtered a-IGZO Substrate Dependency: The Role of Power Density

Authors

• Inês Santos, NOVA University of Lisbon; Henrique Gomes, University of CoimbraFollow
• Henrique Gomes, Institute of Telecommunications and Department of Electrical and Computer Engineering, University of Coimbra, Portugal
• Tobias Cramer, Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, Italy
• Pedro Barquinha, CENIMAT∣i3N, Department of Materials Science, NOVA University of Lisbon and CEMOP/UNINOVA, Portugal

Conference Dates

March 30 - April 3, 2025

Abstract

Please click Additional Files below to see the full abstract

Recommended Citation

Inês Santos, Henrique Gomes, Tobias Cramer, and Pedro Barquinha, "Investigating RF Sputtered a-IGZO Substrate Dependency: The Role of Power Density" in "2025 International Conference on Semiconductor Technology for Ultra Large-Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 9)", Yue Kuo, Texas A&M University & National Yang Ming Chiao Tung University Eds, ECI Symposium Series, (2025). https://dc.engconfintl.org/international_conference_on_semiconductor_technology/15