Title
Effect of different a-InGaZnO TFTs channel thickness upon self-heating stress
Conference Dates
May 19-23, 2019
Abstract
In this work, Indium-Galium-Zinc-Oxide Thin Film Transistors (IGZO TFTs) with different channel thickness has been compared after self-heating stress (SHS). In previous literatures, self-heating of TFTs has been widely discussed and Joule Heat caused during driving TFTs has been compared with different channel length and width [1]. However, different channel thickness hasn’t been investigated. Although TFTs with a larger channel thickness possess a greater drain current, a less degradation is observed when comparing with small channel thickness structures, demonstrated in Figure 1(a). The ΔVt shift in the transfer characteristics are well described by the stretched-exponential equation. The Eτ value, which is the average effective barrier height for electron transport, is extracted in Figure (b). Results has shown that in the thick IGZO TFTs, the value is almost twice of that in the thin IGZO TFTs. From COMSOL simulations demonstrated in Figure 1(c), in could be noticed that different channel thickness effects the electrical field locating at the gate insulator. Therefore, a model is proposed to explain the degradation difference, illustrated in Figure (4).
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Recommended Citation
Po-Wen Chang, Ting-Chang Chang, Yu-Ching Tsao, and Mao-Chou Tai, "Effect of different a-InGaZnO TFTs channel thickness upon self-heating stress" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)", Yue Kuo, Texas A&M University, USA Junichi Murota, Tohoku University, Japan Yukiharu Uraoka, Nara Advanced Institute of Science and Technology, Japan Yasuhiro Fukunaka, Kyoto University, Japan Eds, ECI Symposium Series, (2019). https://dc.engconfintl.org/ulsic_tft_vii/11