Solution processed ultrawide bandgap insulator to semiconductor conversion of amorphous gallium oxide via fermi level control
Conference Dates
May 15-18, 2023
Abstract
Silicon and more recently wide bandgap (WBG) semiconductor materials have dominated the integrated circuit (IC) and thin-film transistor (TFT) space, respectively. For instance, Si technology is widely used in complementary metal oxide semiconductor (CMOS) architectures and as conventional channel material in TFTs in its amorphous and polycrystalline phases. On the other hand, WBG semiconductors such as amorphous InGaZnO have been recently poised to replace a-Si as the dominant TFT channel material especially in modern displays for their superior mobility, transparency, and low temperature processability. Nevertheless, a shift towards ultrawide bandgap (UWBG) semiconductors which have bandgaps (Eg) larger than 4.0 eV unlocks additional properties such as higher breakdown voltage, excellent transparency at wider wavelength range, and harsh environment resilience [1].
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Recommended Citation
Juan Paolo Bermundo, Diki Purnawati, Paul Rossener Regonia, Kazushi Ikeda, and Yukiharu Uraoka, "Solution processed ultrawide bandgap insulator to semiconductor conversion of amorphous gallium oxide via fermi level control" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/23