Base pressure controlled fabrication of high-mobility In2O3 thin film transistors

Conference Dates

May 15-18, 2023


Transparent amorphous oxide semiconductors (TAOSs) have been extensively studied as active channel layers of thin-film transistors (TFTs) for next-generation flat-panel displays. Among TAOSs, amorphous In–Ga–Zn–O (a-IGZO) TFTs have now become the backplane standard for active-matrix liquid-crystal displays and activematrix organic light-emitting diode displays because of their reasonable field-effect mobility (μFE) of over 10 cm2 V−1 s−1, extremely low leakage current, low process temperature (<350 °C), and large-area scalability [1].

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