Invited; ALD of robust amorphous oxide TFTS with turn on at the Boltzmann limit
Conference Dates
May 15-18, 2023
Abstract
The development of amorphous oxide semiconductors have driven great advances in display technology. These materials are poised to expand into new applications by heterointegration at the back-end-of-line (BEOL) of Si CMOS for diverse uses in power harvesting, conversion and management as well as in-memory computing and AI hardware. For acceptance in IC foundries, atomic layer deposition (ALD) is an attractive technology with nanometer-scale precision. Recently, significant advances have been made in ALD processes for both n- and ptype oxide semiconductors [1], [2]. Here, we report robust thin film transistors (TFTs) made using n-type zinc-tinoxide deposited by ALD, with excellent robustness to aging and bias stress. The use of an in situ gate insulator formed by ALD enables a sub-threshold slope (SS) at the Boltzmann limit of 60 mV·dec-1 at room temperature.
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Recommended Citation
Rebecca L. Peterson, Christopher R. Allemang, Tonglin L. Newsom, Tae H. Cho, and Neil P. Dasgupta, "Invited; ALD of robust amorphous oxide TFTS with turn on at the Boltzmann limit" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/37