Invited; Poly-oxide Tft for flexible electronics
Conference Dates
May 15-18, 2023
Abstract
We report poly-oxide TFTs with low temperature crystallization on polyimide substrate. We used conventional gate insulator of SiNx/SiO2 and IGO semiconductor for high performance poly-oxide TFTs. The electrical and structural properties of the TFTs are studied, exhibiting mobility over 50cm2/Vs and excellent stability. TFT circuits such as gate driver and ring oscillator are also discussed together with stability under positive gate bias and NBIS.
Recommended Citation
Jin Jang, "Invited; Poly-oxide Tft for flexible electronics" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/38