Invited; ALD of robust amorphous oxide TFTS with turn on at the Boltzmann limit

Conference Dates

May 15-18, 2023


The development of amorphous oxide semiconductors have driven great advances in display technology. These materials are poised to expand into new applications by heterointegration at the back-end-of-line (BEOL) of Si CMOS for diverse uses in power harvesting, conversion and management as well as in-memory computing and AI hardware. For acceptance in IC foundries, atomic layer deposition (ALD) is an attractive technology with nanometer-scale precision. Recently, significant advances have been made in ALD processes for both n- and ptype oxide semiconductors [1], [2]. Here, we report robust thin film transistors (TFTs) made using n-type zinc-tinoxide deposited by ALD, with excellent robustness to aging and bias stress. The use of an in situ gate insulator formed by ALD enables a sub-threshold slope (SS) at the Boltzmann limit of 60 mV·dec-1 at room temperature.

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