Invited; Poly-oxide Tft for flexible electronics

Conference Dates

May 15-18, 2023


We report poly-oxide TFTs with low temperature crystallization on polyimide substrate. We used conventional gate insulator of SiNx/SiO2 and IGO semiconductor for high performance poly-oxide TFTs. The electrical and structural properties of the TFTs are studied, exhibiting mobility over 50cm2/Vs and excellent stability. TFT circuits such as gate driver and ring oscillator are also discussed together with stability under positive gate bias and NBIS.

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