Invited; P-channel metal oxide thin film transistors for flexible CMOS logic: Challenges and opportunities

Authors

Andrew Flewitt, University of Cambridge
Kham Niang, University of Cambridge
Daisy Gomersall, University of Cambridge
Jake Meeth, University of Cambridge
Niels van Fraassen, University of Cambridge
Sanggil Han, University of Cambridge
James Parish, University of Bath
Andrew Johnson, University of Bath

Conference Dates

May 15-18, 2023

Abstract

The ‘unique selling point’ of thin film transistors (TFTs) compared with MOSFETs is that the former do not require the substrate to be a semiconducting material. It is for this reason that TFTs are required for active matrix display backplanes. However, the development of the ‘Internet of Things’ (IoT) presents a new opportunity for TFTs as it becomes possible to build complex logic or memory circuits on flexible substrates that can be more easily incorporated into products such as clothing or packaging without the form factor restrictions that rigid semiconducting substrates impose. There have been recent reports of the successful fabrication of basic microprocessors comprising TFTs on plastic substrates instead of MOSFETs [1].

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Recommended Citation

Andrew Flewitt, Kham Niang, Daisy Gomersall, Jake Meeth, Niels van Fraassen, Sanggil Han, James Parish, and Andrew Johnson, "Invited; P-channel metal oxide thin film transistors for flexible CMOS logic: Challenges and opportunities" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/47