Invited; What can we do with ferroelectric gate?
Conference Dates
May 15-18, 2023
Abstract
Thin film transistors (TFTs) are one of the key devices in flat panel displays and oxide channel TFTs are currently employed in such applications. Adding functionality to TFTs is an interesting topic for exploring new applications and ferroelectric materials are promising candidates to add functionality to TFTs. When the ferroelectric material is used as a gate insulator, the device has nonvolatile memory function. In addition, we pointed out that the ferroelectric gate can induce much larger charge density than the conventional paraelectric gate insulator [1]. As a result, conductive oxide such as indium-tin oxide (ITO) can be used as a channel, if the thickness is sufficiently thin. Figure 1 show transfer curve of a ferroelectric-gate TFT using Y-doped Hf-Zr-O (YHZO) as the gate insulator and 13-nm-thick ITO as the channel [2].
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Recommended Citation
Eisuke Tokumitsu, "Invited; What can we do with ferroelectric gate?" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/46