Invited; Ternary amorphous oxide semiconductor material toward 3D-integrated ferroelectric devices
Conference Dates
May 15-18, 2023
Abstract
Interest in transistor-based ferroelectric memory (FeFET) using ferroelectric HfO2[1] as a candidate for nextgeneration memory devices has been growing, and FeFETs with a three-dimensional stacked structure (3DFeFET) have been proposed[2]. Recently, amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O have been mentioned as a candidate channel material, and it is expected to suppress the characteristic degradation caused by the formation of interface layers, which is a problem with Si-based materials [3]. deposition (ALD) technology is required to apply AOS to 3D-FeFETs. Conventional AOS are mainly quaternary, and have been designed for display applications that require low-temperature deposition.
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Recommended Citation
Takanori Takahashi, Mutsunori Uenuma, Masaharu Kobayashi, and Yukiharu Uraoka, "Invited; Ternary amorphous oxide semiconductor material toward 3D-integrated ferroelectric devices" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/43