Invited; Ferroelectric phase transformation accelerated in nanolaminate HfO2-ZrO2 thin films
Conference Dates
May 15-18, 2023
Abstract
Ferroelectric HfO2 thin films have a potential to realize high-density nonvolatile memories and neuromorphic circuits for next generation computing. Thus, developments of ferroelectricity-based devices such as FeRAM, FeFET, and FTJ are in progress [1]. Among the dopant engineering studies in HfO2 crystalline films to attain orthorhombic phase that shows ferroelectricity [2], HfO2-ZrO2 solid solution system is recognized as a convenient choice because good ferroelectric properties are achieved at the metallic element ratio of Hf:Zr = 50:50. This character has also promoted the investigations of nanolaminate films and superlattice films that consist of alternately deposited HfO2 and ZrO2 ultrathin films [3-6]. In this work, we present the advantage of nanolaminate HfO2-ZrO2 thin films from the viewpoint of phase transformation kinetics.
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Recommended Citation
Shinji Migita, "Invited; Ferroelectric phase transformation accelerated in nanolaminate HfO2-ZrO2 thin films" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/44